Citation

Freitas WJ, Swart JW. Journal of the Electrochemical Society 1991; 138(10): 3067-3070.

Copyright

(Copyright © 1991)

DOI

10.1149/1.2085368

PMID

unavailable

Abstract

Cobalt suicide formation has been studied using thin films of Co on Si wafers with different impurity contents in the metal and with thin or thick native oxide at the Co/Si interface. The incorporation of impurities into the film was controlled by changes of the pressure during Co deposition. Two RTP systems with two different annealing ambients and heat sources were used for silicidation. For Co films with low contaminant level, thin or thick native oxide can be dissolved and good quality CoSi2 is formed. For Co films with high impurity level in the presence of thick native oxide, the silicidation can be performed, delayed, or even inhibited, depending on film thickness and annealing conditions. © 1991, The Electrochemical Society, Inc. All rights reserved.

Language: en

Keywords

Semiconducting Silicon; Cobalt Silicide; Cobalt and Alloys - Thin Films; Metallic Films - Impurities