Citation

Ismail MS, Bower RW. Electronics Letters 1991; 27(13): 1153-1155.

Copyright

(Copyright © 1991)

DOI

10.1049/el:19910719

PMID

unavailable

Abstract

Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bond-able, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers. © 1991, The Institution of Electrical Engineers. All rights reserved.

Language: en

Keywords

Silicon; Silicon wafers; Platinum silicide; Semiconducting Silicon; Fusion bonding; Integrated Circuit Manufacture; Semiconductor Device Manufacture; Semiconductor devices materials