Citation

Goosen KW, white AE, Short KT. Electronics Letters 1990; 26(1): 49-50.

Copyright

(Copyright © 1990)

DOI

10.1049/el:19900032

PMID

unavailable

Abstract

Recently it has become possible to produce buried singlecrystal silicide layers in silicon on which epitaxial silicon may be grown. We show that if such a layer is used as a groundplane in a microstrip configuration, ultra-high-speed signals (e.g. 100 GHz) can be propagated with far less dispersion than on standard microstrip, by virtue of the close proximity of the groundplane to the centre conductor. © 1990, The Institution of Electrical Engineers. All rights reserved.

Language: en

Keywords

Silicon; Semiconducting silicon; Integrated circuits; Epitaxial Silicon; Microstrip; Microstrip devices; Semiconductor devices and materials; Single-Crystal Silicide Layers; Ultra-High-Speed Integrated Circuits; Ultrahigh Frequency Microstrip