Citation

Vidwans SV, Narsale AM, Salvi VP, Rangwala AA, Guzman L, Marchett F, Dapor M, Calliari L. Radiation Effects and Defects in Solids 1990; 114(1-2): 93-97.

Copyright

(Copyright © 1990)

DOI

10.1080/10420159008213086

PMID

unavailable

Abstract

Ion implantation of (Ti)) ions into silicon substrates at 30 keV has been done and the resulting layers are investigated by Auger Electron Spectroscopy and Seeman-Bohlin X-ray diffraction. Presence of empty antibonding suicide states above the Fermi level put restrictions on the chemical information from AES in this system. In confirmation, we also do not observe any change in the line shape or shift in the energy position of SifL^VV) transition. XRD results indicate the presence of almost all the titanium silicide phases in the as-implanted layers. Whereas, post implantation anneal at 500°C, for 30 min, transforms the silicide phases to TiSi phase. © 1990, Taylor & Francis Group, LLC. All rights reserved.

Language: en