Citation

Shimozaki T, Chikumaru K, Wakamatsu Y, Onishi M. Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals 1996; 60(1): 29-36.

Copyright

(Copyright © 1996)

DOI

10.2320/jinstmet1952.60.1_29

PMID

unavailable

Abstract

Reactive diffusion of the Ti-Si binary system has been studied by using bulk diffusion couples consisted of a 99.5%Ti plate and a 〈111〉 oriented Si wafer as well as a un-recrystallized 99.99%Ti plate and the Si wafer in the temperature range from 723 K to 1123 K. In these diffusion couples, 2∼4 kinds of Ti silicides were formed in the range. TiSi2 occupies a 80∼90% portion of the diffusion layer. The growth of the TiSi2 phase formed in the 99.5%Ti/Si diffusion couples was slower than that in the 99.99%Ti/Si diffusion couples. The square of the growth rate constant k2 has been written as k2=3.1 × 10-4 · exp (-238 kJ/RT)/m2 · s-1 for the 99.5%Ti/Si diffusion couples and k2=4.7 × 10-8 · exp (-179 kJ/RT)/m2 · s-1 for the 99.99%Ti/Si diffusion couples. The growth rate of TiSi2 formed in some diffusion couples consisted of the Si wafer and a recrystallized 99.99%Ti, however, was smaller than that for the un-recrystallized 99.99%Ti/Si diffusion couples. The differences of the growth rate and the activation energy for layer growth between these diffusion couples have been discussed by in terms of the oxygen content in the Ti specimens.

Language: ja

Keywords

Diffusion; Silicon wafers; Oxygen; Binary alloys; Titanium; Titanium silicide; Activation energy; Titanium alloys; Crystal growth; Bulk diffusion couples; Composition effects; Crystal impurities; Bulk diffusion; Growth rate constant; Influence of impurity; Layer growth rate; Plate metal; Purity effects; Reactive diffusion; Recrystallization (metallurgy); Titanium-silicon system