Citation

Angot T, Koulmann JJ, Gewinner G. Europhysics Letters 1996; 35(3): 215-220.

Copyright

(Copyright © 1996)

DOI

10.1209/epl/i1996-00557-x

PMID

unavailable

Abstract

Using high-resolution electron energy loss spectroscopy, we find that two-dimensional ErSi2 suicide epitaxially grown on Si(111) undergoes a semimetal-semiconductor transition upon atomic H dosing. Passivation of the Si top layer already inferred from previous photoemission work is directly demonstrated and provides further evidence of the similarity between the silicide surface atomic structure and the ideal Si(111) termination. Nevertheless, in contrast with the latter case it is shown by using simple chemical bonding and electron counting arguments that saturation of the Si dangling bonds cannot explain by itself the semiconducting nature of the hydrogenated silicide. Possible mechanisms that might account for the observed transition are discussed.

Language: en