Citation

Barge T, Gas P. Journal of Materials Research 1995; 10(5): 1134-1145.

Copyright

(Copyright © 1995)

DOI

10.1557/JMR.1995.1134

PMID

unavailable

Abstract

The solid state reaction between Co and Si has been studied in bulk diffusion couples between 850 and 1100 °C. At the scale of the observations made, the three phases Co2Si, CoSi, and CoSi2 are found to grow simultaneously, according to diffusion controlled kinetics. The results are analyzed in term of the Nernst-Einstein equation that directly relates diffusion fluxes to the free energy changes driving the formation. The growth rates obtained for CoSi2 at high temperatures, in the present bulk samples, are compared with those determined by others in thin films, at much lower temperatures. The comparison requires that attention should be paid to two factors. The first one is that the laws of growth are slightly different for a phase growing simultaneously with two other ones (bulk) and one phase growing alone (thin films). The second factor is the grain size of the various samples, which varies with the temperature of reaction. Once this is done, excellent agreement is obtained between the two sets of measurements. Moreover it is shown that knowing the grain size, it is possible to calculate quite accurately the growth rate from the respective isotope diffusion coefficients both for lattice and grain boundaries of Co and Si in CoSi2. © 1995, Materials Research Society. All rights reserved.

Language: en

Keywords

Thin films; Cobalt; Semiconducting silicon; Semiconducting silicon compounds; Chemical reactions; Film growth; Bulk diffusion couples; Calculations; Cobalt silicides; Crystal lattices; Diffusion fluxes; Diffusion in solids; Free energy; Grain boundaries; Grain size and shape; Isotopes; Isotopes diffusion coefficients; Nernst Einstein equation; Solid state reaction