Citation

Tezuka Y, Kitano N, Nakano N. Journal of the Electrochemical Society 1995; 142(10): 3569-3573.

Copyright

(Copyright © 1995)

DOI

10.1149/1.2050024

PMID

unavailable

Abstract

Damage to Si layer caused by various types of Si02 etchers during overetching has been studied by thermal wave modulated reflectance (TW) and x-ray photoelectron spectroscopy (XPS) methods. It has been fOund that Si02 etchers with 380 or 400 kHz RF form considerably damaged layers containing SiC and SiFi (x-1-3) while those with 13.56 MHz RF cause little damage. This difference is attributed to the difference in ion energy which is dependent on bias frequency. Further, the influence of the damaged layer containing SiC and SiFi on Ti silicidation in salicide (self-aligned suicide) process has been studied. It has been found that the sheet resistance of TiSi2 layer increases when Ti is deposited on a damaged layer. Auger electron spectroscopy (AES) measurement has revealed that SiC in the damaged layer suppressed Ti silicidation process and that carbon atoms pile up around TiN/TiSi2 interface. © 1995, The Electrochemical Society, Inc. All rights reserved.

Language: en

Keywords

Silicon; Silicon carbide; Sheet resistance; Silica; Silicon wafers; X ray photoelectron spectroscopy; Etching; Auger electron spectroscopy; Atoms; Titanium; Electric resistance measurement; Bias frequency; Carbon atoms; Ion energy; Plasma applications; Plasma damage; Silicon sub-oxides; Thermal wave modulated reflectance; Ti salicide transistors; Ti silicidation