Citation

Kal S, Kasko I, Ryssel H. J. Electron. Mater. 1995; 24(10): 1349-1355.

Copyright

(Copyright © 1995, Holtzbrinck Springer-Nature)

DOI

10.1007/BF02655447

PMID

unavailable

Abstract

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface. © 1995 The Metallurgical of Society of AIME.

Language: en

Keywords

Annealing; Silicon compounds; Thin films; Cobalt compounds; Ion beams; Rapid thermal annealing; Mixing; Ultrathin films; Ion implantation; Cobalt silicide; Germanium; Interconnects; Ion beam mixing; ion-beam mixing; rapid thermal anneal; Resistance capacitance coupling