Citation

Chechko GA, Karpus' AT, Prokhur YZ, Sklepovoi VN. Journal of Soviet Mathematics 1993; 66(2): 2203-2206.

Copyright

(Copyright © 1993)

DOI

10.1007/BF01098608

PMID

unavailable

Abstract

We consider the diffusion of a dopant through a moving interface in the suicide film-Si system during silicide layer growth. The dopant concentration distribution is derived in analytical form by the integral Fourier transform method with subsequent reduction of the dopant redistribution problem to numerical solution of two integral equations. The results are presented in the form of curves plotting the time dependence of dopant concentration on both sides of the interface for various values of diffusion coefficients and interface velocity. The effect of physical parameters on the variation of dopant concentration near the interface is demonstrated. © 1993 Plenum Publishing Corporation.

Language: en