Citation

Kinomura A, Takai M, Namba S, Ryssel H, Tsien PH, Burte E, Satou M, Chayahara A. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and 1992; 64(1-4): 770-773.

Copyright

(Copyright © 1992)

DOI

10.1016/0168-583X(92)95575-C

PMID

unavailable

Abstract

Lateral growth of cobalt suicide on silicon was investigated by a 1.5 MeV helium ion microprobe with Rutherford backscattering (RBS). Lateral and cross-sectional cobalt distributions in cobalt suicide patterns were directly observed by RBS-mapping and RBS-tomography methods. Comparison between arsenic-implanted (200 keV, 7 ×1015 As+ cm2) and unimplanted patterns revealed that ion beam mixing by arsenic implantation suppressed the lateral growth of cobalt suicide during rapid thermal annealing at 1000°C for 1 s. © 1992.

Language: en