Citation

Lee J, Reif R. Journal of the Electrochemical Society 1992; 139(4): 1166-1170.

Copyright

(Copyright © 1992)

DOI

10.1149/1.2069358

PMID

unavailable

Abstract

A cold-wall plasma enhanced chemical vapor deposition (PECVD) system has been used to investigate the effects of deposition variables on the properties of titanium disilicide deposited on oxide patterned wafers. The as-deposited films have low resistivities in the range of 14 to 25 μΩ cm as a function of temperature and SiH4/TiCl4 flow rate ratios, and show the preferred orientation of the C-54 TiSi2 phase. The surface of the suicide film on SiO2 is smooth, while that of the film on silicon is rough. The surface roughness of the silicide on silicon is affected mainly by gas flow rate ratios. Cross-section transmission electron microscopy of the films annealed at 950°C for 30 min in a nitrogen ambient shows the stable silicide underneath an amorphous layer. This suggests that as-deposited silicide films on SiO2 can withstand a high temperature process, and have good adhesion on SiO2. Finally, as an application of this PECVD TiSi2 as gate electrode material, the polycide structure was realized. The low resistivity (17 to 19 μΩ cm) suicide film deposited on polysilicon reveals a good interface between silicide and nolvsilicon. and a smooth surface. © 1991, The Electrochemical Society, Inc. All rights reserved.

Language: en

Keywords

As Deposited Films; Gas Flow Rate Ratios; Gate Electrode Material; Microscopic Examination - Transmission Electron Microscopy; Oxide Patterned Wafers; Semiconducting Films - Roughness Measurement; Semiconducting Silicon Compounds; Silicide Film; Titanium Compounds; Titanium Disilicide