Citation

Sellai A, Dawson P, Hendren WR, Magill SHS, Gamble HS. Electronics Letters 1992; 28(2): 164-165.

Copyright

(Copyright © 1992)

DOI

10.1049/el:19920102

PMID

unavailable

Abstract

It is shown that surface plasmons (SPs) are supported on thin PtSi films. Using a prism-air gap-sample configuration, p- polarised infra-red light (3·39 μ m) has been coupled with ~95% efficiency to SPs on the silicide electrode of PtSi-Si Schottky barrier structures. Stimulating SPs offers both a means of optically characterising silicide films and of enhancing optical absorption with a view to significantly increasing the Schottky barrier photoresponse. © 1992, The Institution of Electrical Engineers. All rights reserved.

Language: en

Keywords

Infra-red detedtors; Infrared Detectors; Metallic Films; Platinum silicide; Schottky barriers; Schottky-barrier diodes; Semiconducting Films; Semiconductor Devices, Schottky Barrier; Semiconductor Diodes; Silicide films; Surface phenomena; Surface plasmons