Citation

Hillman JT, Triggs WM. Journal of the Electrochemical Society 1992; 139(12): 3574-3578.

Copyright

(Copyright © 1992)

DOI

10.1149/1.2069124

PMID

unavailable

Abstract

Tungsten suicide films produced by dichlorosilane reduction of tungsten hexafluoride have better step coverage and adhesion than films produced by the more common process of silane reduction. However, depositing uniform films with a silicon to tungsten ratio significantly higher than 2.6 has been difficult with the dichlorosilane process. In order to gain control of the silicon to tungsten ratio of the film a small amount of disilane can be added to the dichlorosilane and tungsten hexafluoride based chemical vapor deposition process. The silicon content of the resulting films is directly proportional to the disilane partial pressure. The films produced by this process have lower fluorine content and better adhesion than films produced by silane reduction. This implies a reduction in polycide open-circuit failures, especially at design rules below 0.8 μm. © 1991, The Electrochemical Society, Inc. All rights reserved.

Language: en

Keywords

Chemical vapor deposition; Thin films; Ceramic materials; Reduction; Characterization; Dichlorosilane; Polycide gates; Silanes; Tungsten compounds; Tungsten hexafluoride; Tungsten silicides