Citation

Lee J, Kwon H, Lee S. Journal of Korean Institute of Metals and Materials 2011; 49(11): 905-909.

Copyright

(Copyright © 2011)

DOI

10.3365/KJMM.2011.49.11.905

PMID

unavailable

Abstract

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (≤30 Ω/sq) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel suicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a 2×2 cm 2, Cz wafer.

Language: ko

Keywords

Scanning electron microscopy; Silicon wafers; Ohmic contacts; Nickel suicide; Electric conductivity; X ray spectroscopy; Metallizing; Metals; Plating; Metal contacts; Solar cells; Silicon surfaces; Conductivity; Doping levels; Energy dispersive X ray spectroscopy; Heavy doping; Low costs; Metallization process; Ni/Cu front metal; Scanning electron microscopy(SEM); Scanning electrons; Seed layer; Selective emitters; Silicon cells; Silicon solar cells