Citation

Li YZ, Wang ZL, Luo H, Wang YZ, Xu WJ, Ran GZ, Qin GG, Zhao WQ, Liu H. Opt. Express 2010; 18(15): 15942-15947.

Copyright

(Copyright © 2010, Optical Society of America)

DOI

10.1364/OE.18.015942

PMID

unavailable

Abstract

A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (-10 nm) Ni suicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni suicide / polycrystalline p-Si/ V2O5/ NPB/ CBP: (ppy)2Ir(acac)/ Bphen/ Bphen: Cs2CO 3/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V2O5/ NPB, and the Ni suicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni suicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively. © 2010 Optical Society of America.

Language: en

Keywords

Light emitting diodes; Silicon; Electric resistance; Substrates; Iridium; Light emission; Anodes; Series resistances; NI suicide; Cesium; Composite anodes; Conversion efficiency; External quantum efficiency; Glass substrates; Organic light emitting diodes (OLED); p-Si layers; Phosphorescence; Polycrystalline; Power conversion efficiencies