Citation

Jeong W, Ko Y, Bang S, Lee S, Jeon H. Journal of the Korean Physical Society 2010; 56(3): 905-910.

Copyright

(Copyright © 2010)

DOI

10.3938/jkps.56.905

PMID

unavailable

Abstract

HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD) with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH 3)2]4} as a Hf precursor and a N2 plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250°C The optimized process temperature, plasma power, and pressure were 250°C, 300 W, and 1 Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700°C for 10 min. HfN films deposited on contact holes (0.12-/μm wide and 1.8-μm deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures, and the formation of a copper suicide phase was observed after annealing at 650°C.

Language: en

Keywords

Diffusion barrier; HfN; ALD