Citation

Kjornrattanawanich B, Windt DL, Seely JF. Opt. Lett. 2008; 33(9): 965-967.

Copyright

(Copyright © 2008, Optical Society of America)

DOI

10.1364/OL.33.000965

PMID

unavailable

Abstract

Si/Gd multilayers designed as narrowband reflective coatings near 63 nm were developed. The highest peak reflectance of 26.2% at a 5° incident angle was obtained at 62 nm, and the spectral bandwidth was 7.3 nm FWHM. The fits for x-ray and extreme ultraviolet reflectance data of Si/Gd multilayers indicate the possibility of suicide formation at the Si-Gd interfaces. B4C, W, and SiN were deposited as interface barrier layers to improve the reflectance of Si/Gd multilayers. More than an 8% increase in reflectance was observed from the interface-engineered Si/W/Gd and Si/B4C/Gd multilayers. © 2008 Optical Society of America.

Language: en

Keywords

Silicon; Silicon nitride; Multilayers; Reflection; As interfaces; Extreme Ultraviolet; Incident angles; Narrow bands; Normal incidence; Reflectance data; Reflective coatings; Spectral bandwidth