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Citation |
Jelenkovic EV, Tong KY, Cheung WY, Wong SP. Semiconductor Science and Technology 2003; 18(6): 454-459. |
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Copyright |
(Copyright © 2003) |
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DOI |
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PMID |
unavailable |
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Abstract |
Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed. Language: en |