Citation

Eom GY, Oh HS. Journal of the Korean Physical Society 2003; 43(1): 102-104.

Copyright

(Copyright © 2003)

DOI

unavailable

PMID

unavailable

Abstract

This paper presents a novel process to improve the electrical characteristics and the reliability in submicron (<0.1 μm) Metal Oxide Semiconductor Fleld Effect Transistors (MOSFET) devices using a novel shallow trench isolation (STI) structure and a two-step titanium-salicidation process. Differently from normal LOCOS technology. Ultra Large Scale Integration (ULSI) devices using STI technology have a unique "inverse narrow-channel effect" when the channel width of the device is scaled down. Scanning electron microscopy showed that perfect growth of TiSi2 and the STI structure improved the narrow channel effect. A mobility of 228 cm 2/V·s was measured for 0.1-μm NMOSFET at gate voltage (Vg) = 0.5 V. A junction leakage current of 2.95 × 10 -10 A was measured from an n+/p-well at a reverse voltage of 0.1 V. The drain saturation current of 1.5 × 10-4 A/μm was measured from PMOSFET at Vg = 1.5 V. A subthreshold slope of 79 mV/decade was measured for a PMOSFET as the drain current was varied from 1 μA up to 10 μA.

Language: en

Keywords

Suicide; TiSi2; 0.1 μm; STT