Citation

Ikonić Z, Kelsall RW, Harrison P. Semiconductor Science and Technology 2004; 19(1): 76-81.

Copyright

(Copyright © 2004)

DOI

10.1088/0268-1242/19/1/013

PMID

unavailable

Abstract

Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal suicide structures. Guidelines for choosing the confinement and contact layer parameters are given.

Language: en

Keywords

Semiconducting silicon compounds; Semiconductor metal boundaries; Surface plasmon resonance; Semiconductor doping; Heterojunctions; Electron energy levels; Infrared radiation; Quantum theory; Electron transitions; Polarization; Quantum cascade lasers (QCL); Semiconductor lasers; Semiconductor waveguides; Waveguides