Citation

Rado C, Eustathopoulos N. Interface Science 2004; 12(1): 85-92.

Copyright

(Copyright © 2004)

DOI

10.1023/B:INTS.0000012297.30968.02

PMID

unavailable

Abstract

The spreading time for millimeter-sized droplets of nonreactive molten suicides on silicon carbide in high vacuum is several orders of magnitude higher than typical spreading times observed in nonreactive metal/ceramic systems. To explain this paradox, two types of experiments were performed: (i) wetting experiments for various nonreactive CuSi alloys on α-SiC single crystals using the sessile drop and dispensed drop techniques, with emphasis on determining the initial contact angle; and (ii) characterization of surface chemistry of SiC after different heat treatments in high-vacuum furnaces. It is shown that spreading kinetics in these systems are controlled by the kinetics of removing of wetting barriers present or developed in situ on SiC surface.

Language: en

Keywords

Vacuum applications; Silicon carbide; SiC; Ceramic materials; Auger electron spectroscopy; Single crystals; Heat treatment; Wetting; Surface chemistry; Auger spectroscopy; Contact angle; Dispensed drop techniques; Graphitization; Heat treating furnaces; High-vacuum furnaces; Metals; Molten materials; Sessile drop technique; Spreading kinetics