Citation

Chu S, Hirohada T, Kuwabara M, Kan H, Hiruma T. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2004; 43(2 A): L127-L129.

Copyright

(Copyright © 2004)

DOI

10.1143/jjap.43.l127

PMID

unavailable

Abstract

Temporal decay characteristics of highly (110)-oriented β-FeSi 2 films were explored at 77 K and at room temperature. The 1.5μm-band photoluminescence (PL) decayed as fast as that of the laser pulse, giving a characteristic decay time of subnanosecond, which is four orders faster than that of β-FeSi2 precipitates previously reported. In addition, the PL intensity of our β-FeSi2 films suffered a much weaker thermal quenching from 77 K to room temperature. These results indicated possible promising applications in light-emitting and high-speed response devices.

Language: en

Keywords

Suicide; Scanning electron microscopy; Epitaxial growth; Silicide; Iron compounds; X ray diffraction analysis; Carrier concentration; Photoluminescence; Quenching; Magnetron sputtering; Film; Photomultipliers; Quartz; Time-resolved photoluminescence; β-FeSi2