Citation

Ho CS, Pey KL, Tung CH, Zhang BC, Tee KC, Karunasiri G, Chua SJ. Electrochemical and Solid-State Letters 2004; 7(11): H49-H51.

Copyright

(Copyright © 2004)

DOI

10.1149/1.1798191

PMID

unavailable

Abstract

Void free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.

Language: en

Keywords

Cobalt compounds; Transmission electron microscopy; Epitaxial growth; Semiconducting silicon; Crystal orientation; Titanium compounds; Nanostructured materials; Nucleation; Transistors; Optimization; Stress analysis; Oxide mediated epitaxy (OME); Shallow trench isolation (STI); Sub-quarter micrometer geometries