Citation

Lin JF, Bird JP, He Z, Bennett PA, Smith DJ. Appl. Phys. Lett. 2004; 85(2): 281-283.

Copyright

(Copyright © 2004, American Institute of Physics)

DOI

10.1063/1.1769583

PMID

unavailable

Abstract

The electrical properties of self-assembled epitaxial NiSi 2 nanowires (NW) formed on Si substrates were measured. The quantum corrections due to weak antilocalization and electron-electron interactions were also found. The analysis of magnetoresistance indicates that electron phase coherence in the NWs was limited by Nyquist dephasing below 10 K. The phase-breaking and spin-orbit scattering lengths were found to be ∼45 nm and 3-7 nm, at 4.2 K, comparable to those in thin NiSi 2 films. The nanoscale dimensions of the NWs allow the observation of quantum transport at higher temperatures (at least 30 K).

Language: en

Keywords

Silicon; Thin films; High temperature effects; Electric resistance; Nanostructured materials; Magnetoresistance; Atomic force microscopy; Nickel compounds; Electron scattering; Electron-electron interactions (EEI); Nanoscale interconnects; Phonons; Quantum theory; Self assembly; Spin-orbit scattering; Weak-antilocalization (WAL)