Citation

Shimoda S, Kobayashi T. J. Appl. Physics 2004; 96(6): 3550-3552.

Copyright

(Copyright © 2004, American Institute of Physics)

DOI

10.1063/1.1778820

PMID

unavailable

Abstract

A three-dimensional medium-energy ion scattering (3D-MEIS) spectrometer was used to analyze the crystallographic structure of an Er silicide film on a Si(111) substrate. The three-dimensional detector used was a positive-sensitive and time-resolving microchannel plate detector with two delay-line anodes intersecting at right angles. The blocking pattern from the ErSi2 structure was observed in the "011̄2", "022̄3" and "011̄1" directions of the film. The results reveal the effectiveness of this 3D-MEIS spectrometer for crystallographic structural analysis of materials.

Language: en

Keywords

Detectors; Probability; Silicon compounds; Lattice constants; Epitaxial growth; Monolayers; Crystallography; Ion beams; Substrates; Erbium; Crystal structure; Helium; Spectroscopic analysis; Angle measurement; Neutralization; Scattering and recoiled imaging spectrometry (SARIS); Spectrometers; Structural analysis; Three-dimensional medium-energy ion scattering (3D-MEIS); Time-of-flight (TOF) energy analyzers