Citation

Chen HC, Liao KF, Lee SW, Chen LJ. Thin Solid Films 2004; 469-470(SPEC. ISS.): 483-486.

Copyright

(Copyright © 2004)

DOI

10.1016/j.tsf.2004.06.167

PMID

unavailable

Abstract

Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic suicide (NiSi2) may find applications in advanced devices. © 2004 Elsevier B.V. All rights reserved.

Language: en

Keywords

Chemical vapor deposition; Silicon; Semiconducting silicon compounds; Epitaxial growth; Silicide; Rapid thermal annealing; Semiconducting gallium arsenide; Crystal lattices; Self-forming; Semiconducting indium gallium arsenide; SiGe; Tube