Citation

Wang JH, Liu PT, Chang TS, Chang TC, Chen LJ. Thin Solid Films 2004; 469-470(SPEC. ISS.): 393-397.

Copyright

(Copyright © 2004)

DOI

10.1016/j.tsf.2004.09.014

PMID

unavailable

Abstract

The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature. © 2004 Elsevier B.V. All rights reserved.

Language: en

Keywords

Annealing; Silicon compounds; Leakage currents; Silicon wafers; Oxidation; Transmission electron microscopy; Chemical mechanical polishing; Mass spectrometry; Catalysis; Auger electron spectroscopy; Copper compounds; Copper silicide; MIS devices; Permittivity; Metallizing; Desorption; Copper suicide; Dielectric constant; Hydrogen silsesquioxane (HSQ) films; Porosity; Porous materials; Porous polysilazane; Porous polysilazane (PPSZ) films; Thermal desorption mass spectroscopy (TDS)