Citation

Huang ML, Yang JH, Chang YA, Ragan R, Chen Y, Ohlberg DAA, Williams RS. Applied Physics A: Materials Science and Processing 2004; 78(1): 1-3.

Copyright

(Copyright © 2004)

DOI

10.1007/s00339-003-2258-6

PMID

unavailable

Abstract

Chen et al. recently carried out self-assembled growth of epitaxial sub-10 nm erbium disilicide (C32, hP3) nanowires on Si(001). They pointed out that the success of this self-assembly process is due to asymmetric lattice mismatches in the two orthogonal crystallographic directions of the two materials, i.e. [0001]ErSi2/[110]si,+6.5% and [1120] RESi2/[110]si,-1.3%. In this paper, we have established experimentally that (Er1-xGdx)Si2 and (Er 1-xSmx)Si2 exist with values of x from 0 to 1 and that their lattice parameters follow Vegard's law. Since the binary GdSi2 and SmSi2 end members in each of these ternary systems have a and c unit cell parameters greater than those of the ErSi 2 end member, we have determined that an optimal lattice mismatch can be achieved with the Si substrate at a composition of (Er 0.45Gd0.55)Si2 and (Er0.62Sm 0.38)Si2. It is reasonable to expect a higher quality of self-assembled nanowire growth on Si by employing these ternary silicides. A review of the atomic sizes of the rare earth metal elements of the lanthanide series indicates that many of the binary disilicides, when exhibiting the C32 structure, should have a tendency to form ternary and higher-order disilicides. These materials would offer many possibilities for the growth of suicide nanowires with interesting electronic, magnetic and optical properties.

Language: en

Keywords

Annealing; Silicon compounds; Crystal defects; Lattice constants; Nanostructured materials; X ray diffraction analysis; Phase transitions; Ternary systems; Composition; Crystal growth; Erbium compounds; Nanowires; Self assembly; Lattice mismatches