Citation

Vasiliev AG, Vasiliev AL, Zakharov RA, Orlikovsky AA, Horin IA, Eindou M. Russian Microelectronics 2004; 33(1): 1-6.

Copyright

(Copyright © 2004)

DOI

10.1023/B:RUMI.0000011093.63543.a8

PMID

unavailable

Abstract

The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon-nitrogen atmosphere. A model is proposed that accounts for the nature of suicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSix layer to a far greater extent than by the Ti layer.

Language: en

Keywords

Diffusion; Annealing; High temperature effects; Epitaxial growth; Heating; Cobalt; Ternary compounds; Magnetron sputtering; Smooth interfaces; Substrate interfaces; Surface-diffusion reactions