Citation

Chu S, Hirohada T, Kan H, Hiruma T. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2004; 43(2 A): L154-L156.

Copyright

(Copyright © 2004)

DOI

10.1143/jjap.43.l154

PMID

unavailable

Abstract

β-FeSi2-based light-emitting devices were prepared by growing continuous and highly oriented β-FeSi2 films on Si(111) substrates using RF magnetron sputtering deposition with an Fe target. Response characterization of electroluminescence (EL) was carried out by measuring the rise time of the EL signal at room temperature, giving a characteristic time of approximately 15ns for the device size of 1.5mm × 1.5 mm. Temperature-dependent EL measurement was carried out from 10 K to 300 K and it was found that a 1.5 urn band EL signal underwent thermal quenching with an active energy of 0.11±0.01eV, whereas a 1.1 μm band EL signal appeared at around 200 K and its intensity increased with temperature, indicating a spatial change in emission area. The use of n-type β-FeSi2 as an active layer is proposed based on the consideration of current injection mode.

Language: en

Keywords

Light emitting diodes; Suicide; Probability; Annealing; Chemical vapor deposition; Approximation theory; Silicide; Response; Iron compounds; Hall effect; Quenching; Magnetron sputtering; Spectrum analysis; Electroluminescence; β-FeSi2; Light-emitting devices; Quantum efficiency; β-FeSl2