Citation

Carter JD, Cheng G, Guo T. J. Phys. Chem. B 2004; 108(22): 6901-6904.

Copyright

(Copyright © 2004, American Chemical Society)

DOI

10.1021/jp0499326

PMID

unavailable

Abstract

We have developed a new method with which we can for the first time produce self-aligned cobalt suicide (CoSi 2) nanostructures from Co nanoparticles. These nanostructures are formed by reacting Co nanoparticles with Si substrates at 900°C. Their dimensions are normally 3 to 10 nm wide and up to a few micrometers long. The orientations of these nanostructures are controlled by the crystalline substrate, as they are orthogonally and hexagonally aligned on Si(100) and Si(111), respectively. Because these self-aligned nanostructures (SAN) are thermally stable up to 1000°C in air and chemically inert to prolonged treatment with strong acids, and because their sizes are uniform and much smaller than those made from lithography, they can be ideal materials for making components such as electric contacts, interconnects, and gates for future nanoelectronics.

Language: en

Keywords

Thermodynamic stability; Cobalt compounds; Monolayers; Lithography; Nanostructured materials; Electric contacts; Crystalline materials; Crystalline substrates; Device fabrication; Nanoelectronics; Self-aligned nanostructures (SAN)