Citation

Flammini R, Wiame F, Belkhou R, Taleb-Ibrahimi A, Gregoratti L, Barinov A, Marsi M, Kiskinova M. Surface Science 2004; 564(1-3): 121-130.

Copyright

(Copyright © 2004)

DOI

10.1016/j.susc.2004.06.200

PMID

unavailable

Abstract

The interaction between the hydrogenated silicon surface and gold, has been investigated as a function of temperature by means of high resolution core-level photoelectron spectroscopy (PES) and scanning photoelectron microscopy (SPEM). We have studied the effect of the annealing on a sample obtained by deposition of 1.5 ML of gold on an in-situ hydrogenated Si(111)-7 × 7 substrate. In order to characterize the substrate as well as the adsorbate, both Si2p and Au4f core-levels have been analysed. Our results show that, after annealing at 550°C, bidimensional (2D) and tridimensional (3D) phases coexist. The two phases have been spectroscopically characterized. On the 3D phase (micrometer sized islands) a bulk-Au component is present in the Au4f7/2 spectrum. We argue that the presence of the hydrogen layer promoted the formation of the islands. We propose a model for the temperature evolution of this interface. © 2004 Elsevier B.V. All rights reserved.

Language: en

Keywords

Suicides; Annealing; Silicon; Interfaces (materials); Gold; Thermal effects; Substrates; Surface structure, morphology, roughness, and topography; Photoemission; Hydrogenation; Clusters; Gold silicidess; Hydrogen atom; Hydrogen atoms; Photoemission (total yield); Surface topography