Citation

Cai Q, Zhou W. J. Phys. Condens. Matter 2004; 16(39): 6835-6840.

Copyright

(Copyright © 2004, IOP Publishing)

DOI

10.1088/0953-8984/16/39/016

PMID

unavailable

Abstract

Using vicinal Si(001) surfaces with a 4° miscut angle towards the direction as templates, an approach to fabricating well-aligned nanowires of Er suicide is demonstrated. At Er coverage of 0.1-0.3 nm and annealing temperature of 600-700°C, ordered nanowires are obtained on the surface several hundreds of nanometres in length. STM images and LEED patterns reveal that the nanowires are all oriented along the [̄110] direction. The size, shape and density of the nanowires depends upon annealing temperature and duration as well as coverage. The experimental evidence also suggests a transition of bulk atomic structures between AlB2 and ThSi2 for Er suicide nanostructures. The alignment of the Er nanowires will make the measurements of their physical properties practicable.

Language: en

Keywords

Annealing; Crystal atomic structure; Low energy electron diffraction; Scanning tunneling microscopy; Surface structure; Nanostructured materials; Silicides; Erbium; Density (specific gravity); Base pressure; Nanowires; Ordered orientation