Citation

He Y, Liu XL, Feng JY, Wu QL. J. Appl. Physics 2004; 96(11): 6928-6930.

Copyright

(Copyright © 2004, American Institute of Physics)

DOI

10.1063/1.1810632

PMID

unavailable

Abstract

The effect of a thin Ge interlayer on the formation of Ni silicides on (100)Si substrates has been investigated. X-ray diffraction shows a remarkable increase of the nucleation temperature of NiSi2 in the presence of the Ge interlayer. Four-probe measurements show that the sheet resistance of suicide formed in Ni/Ge/Si system remains stable up to 850°C, while the sheet resistance of suicide formed in Ni/Si system presents a significant increase at 750°C. Scanning electron microscopy indicates that island formation is not observed in the NiSi film grown on Ge/Si substrate annealing at 800°C. The classical nucleation theory is employed to explain the increased temperature of the nucleation of NiSi2 in the Ni/Ge-Si system. © 2004 American Institute of Physics.

Language: en

Keywords

Scanning electron microscopy; X ray diffraction; Silicides; Substrates; Nucleation; Electrical properties; Germanium; Nickel compounds; Free energy; Linewidths; Temperature distribution; Vacuum chamber