Citation

Bae MS, Ji HH, Lee HJ, Oh SY, Huang BF, Yun JG, Wang JS, Park SH, Lee HD. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2004; 43(1): 91-95.

Copyright

(Copyright © 2004)

DOI

10.1143/JJAP.43.91

PMID

unavailable

Abstract

In this paper, the dependency of suicide properties such as sheet resistance and cross-sectional profile of NiSi on the source/ drain and gate dopants is described. There was minimal difference in sheet resistance among the dopants used, namely, As, P, BF2 and B11, just after the formation of NiSi using RTP. However, NiSi properties strongly depended on the dopants when additional thermal treatment was applied after silicidation. P-type dopants showed superior properties compared to n-type dopants, and BF 2-doped silicon showed the most stable property, while As-doped silicon, the poorest. The principal reason for the excellent properties of the BF2-doped sample is the retarded Ni diffusion due to the existence of fluorine. In contrary, the As-doped sample showed severe agglomeration and abnormal oxidation of NiSi possibly due to the As sublimation.

Language: en

Keywords

Thermodynamic stability; Scanning electron microscopy; CMOS integrated circuits; Ion implantation; MOSFET devices; Transmission electron microscopy; Ion beams; Rapid thermal annealing; Substrates; X ray diffraction analysis; Semiconductor doping; Thermal stability; Nickel compounds; Abnormal oxidation; Dopant; Ion beam sputtering (IBS); NISi