Citation

Kim DI, Oh KH, Lee HC, Chang YJ, Sohn WS, Jang J. J. Microsc. 2004; 215(2): 121-126.

Copyright

(Copyright © 2004, John Wiley and Sons)

DOI

10.1111/j.0022-2720.2004.01360.x

PMID

unavailable

Abstract

Crystallographic properties of suicide mediated crystallization (SMC) polycrystalline silicon (poly Si) and excimer laser annealing (ELA) poly Si were studied by electron backscattered diffraction. Large-grain sized poly Si with a large fraction of low-angle grain boundaries was acquired by SMC, and small-grain sized poly Si with high-angle grain boundaries especially around 60° was acquired by ELA. The thin film transistor (TFT) device characteristics were investigated in view of short-range crystallinity (pattern quality) and long-range crystallinity (misorientation distribution) of the specimens. Short-range crystallinity did not significantly affect the TFT device characteristics, and long-range crystallinity considering the low energy level of special boundaries could be better related to the TFT device characteristics of poly Si.

Language: en

Keywords

article; Polycrystalline materials; priority journal; statistical significance; Polysilicon; Electron diffraction; Thin film transistors; Grain boundaries; Excimer lasers; silicon derivative; C. thin film transistor (TFT); Cristallinity; crystallization; crystallography; CSL; Device characteristics; EBSD; ELA; electron diffraction; excimer laser; Excimer laser annealing; film; Grain boundary energy; Grain-boundary energy; Kikuchi patterns; Misorientation; Misorientations; Pattern quality; Poly Si; Pseudo kikuchi pattern; Pseudo Kikuchi pattern; semiconductor; SMC; Suicide mediated crystallization; TFT crystallinity; Thin film transistor crystallinity