Citation

Persheyev SK, Drapacz PR, Rose MJ, Fitzgerald AG. Semiconductors 2004; 38(3): 344-346.

Copyright

(Copyright © 2004)

DOI

10.1134/1.1682341

PMID

unavailable

Abstract

The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface. © 2004 MAIK "Nauka/ Interperiodica".

Language: en