Citation

Jankowski AF, Saw CK, Walton CC, Hayes JP, Nilsen J. Thin Solid Films 2004; 469-470(SPEC. ISS.): 372-376.

Copyright

(Copyright © 2004)

DOI

10.1016/j.tsf.2004.08.153

PMID

unavailable

Abstract

Scandium-silicon (Sc/Si) multilayer structures show promise to efficiently reflect 45-50-nm wavelength X-rays at normal incidence. Barrier layers have been added at each interface to minimize the formation and growth of suicide compounds that broaden interfaces and, consequently, cause a change in the layer spacing and loss of reflectivity. Although tungsten (W) is an effective diffusion barrier, its high absorption causes a loss of reflectivity. We now evaluate the use of another refractory material for the barrier layer, boron carbide (B4C), which is a stable ceramic. The multilayer microstructure and its stability are evaluated using microscopy and diffraction methods. It is found that the use of B4C enhances the thermal stability of Sc/Si multilayers to an extent equivalent that offered by W barrier layers with only a few percent reduction in the reflectivity. © 2004 Elsevier B.V. All rights reserved.

Language: en

Keywords

Diffusion; Annealing; Thermodynamic stability; Diffusion barrier; Multilayers; Microstructure; Lithography; X ray diffraction analysis; Reflection; Sputter deposition; Scandium compounds; Light absorption; Diffusion barriers; Semiconductor growth; Atomic force microscopy; Laser beam effects; Boron carbide; Boron-carbide; Extreme-ultraviolet (EUV) lithography; Laser-driven X-ray laser (XRL) beams; Metastability; Multilayer; Reflectivity; Refractory materials; Scandium-silicon