Citation

Yun JG, Ji HH, Oh SY, Bae MS, Lee HJ, Huang BF, Kim YG, Wang JS, Sung NG, Hu SB, Lee JG, Park SH, Lee HS, Ho WJ, Kim DB, Lee HD. Electrochemical and Solid-State Letters 2004; 7(4): G83-G85.

Copyright

(Copyright © 2004)

DOI

10.1149/1.1649831

PMID

unavailable

Abstract

Nickel suicide is a most up-to-date self-aligned silicide (salicide) technology for nanoscale complementary metal-oxide-semiconductor field-effect transistors. However, an unintended oxidation of nickel silicide happened only on As-doped substrate. This abnormal oxidation phenomenon occurred only when the annealing temperature was higher than 613°C (sublimation point of As). The main reason for the oxidation is believed to the thermal energy that induces the diffusion of Ni from the nickel silicide to the substrate direction. Due to the oxidation, nickel silicide on As-doped substrate showed poor thermal stability contrasted to BF2-doped substrate. © 2004 The Electrochemical Society All rights reserved.

Language: en

Keywords

Annealing; Thermodynamic stability; Semiconducting silicon compounds; MOSFET devices; Oxidation; Contact resistance; Electric resistance; Substrates; Semiconductor doping; Sublimation; Spectrometry; Thermal energy