Citation

Yun JG, Soon-Young OH, Hee-Hwan JI, Huang BF, Park YH, Wang JS, Park SH, Bae TS, Lee HD. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2004; 43(10): 6998-6999.

Copyright

(Copyright © 2004)

DOI

10.1143/JJAP.43.6998

PMID

unavailable

Abstract

In this study, the abnormal oxidation of nickel suicide on an n-type substrate and the suppression of the abnormal oxidation by N2 preamorphization implantation (PAI) have been investigated. Although there is little difference in the sheet resistance regardless of dopants just after the silicidation, a strong dependence was observed after high-temperature postsilicidation annealing. Only the As-doped source/drain was oxidized during the postsilicidation annealing, and silicide properties were severely degraded. To prevent the unintended oxidation of the As-doped source/drain, N2 or Ge PAI was implemented and the thermal stability was greatly improved by N2 PAI with a Ti capping layer.

Language: en

Keywords

Annealing; Thermodynamic stability; MOSFET devices; Oxidation; Electric resistance; Nitrogen; Degradation; Nickel suicide; Semiconductor doping; Arsenic; Thermal stability; Nickel silicide; Amorphization; Nickel compounds; Abnormal oxidation; CMOSFET; Pai (preamorphization implantation); Preamorphization implantation (PAI)