Citation

Mitan MM, Kim HC, Alford TL, Malgas GF, Adams D. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2004; 22(6): 2804-2810.

Copyright

(Copyright © 2004)

DOI

10.1116/1.1815312

PMID

unavailable

Abstract

The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures. © 2004 American Vacuum Society.

Language: en

Keywords

Diffusion; Thermodynamic stability; Thin films; Silicon wafers; Thermal effects; Optical microscopy; Rapid thermal annealing; Silicides; X ray diffraction analysis; Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Hydrogen peroxide; Atomic force microscopy; Solid phase reactions; Metallizing; Gas flow rates; Nitrides; Rapid thermal annealers (RTA); Silver