Citation

Zhang T, Wu Y, Qian W, Liu Y, Zhang X. Science in China, Series E: Technological Sciences 2002; 45(4): 348-352.

Copyright

(Copyright © 2002)

DOI

unavailable

PMID

unavailable

Abstract

Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 μA/cm2 to does of 5times;1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous suicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50 μA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900°C and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the transistors decrease markedly; the microwave property has been improved obviously.

Language: en

Keywords

Co silicides; High ion flux; Ion implantation into silicon; Rapid thermal annealing