Citation

Xie EQ, Wang WW, Jiang N, He DY. Acta Phys. Sinica 2002; 51(4): e876.

Copyright

(Copyright © 2002, Ke xue chu ban she)

DOI

unavailable

PMID

unavailable

Abstract

Manganese silicide thin films have been prepared on n-type Si(100) wafers by solid-phase reaction. The phase transformation has been characterized by X-ray diffraction, in-situ resistivity and Fourier infrared transmittance measurements. It was shown that two manganese silicide phases have been sequentially formed by the reaction of thin layer Mn with Si substrate at different infrared radiation stages. The crystallization of the MnSi occurs at 410°C, while MnSi/MnSi1.73 phase transformation temperature is 530°C. Fourier transform infrared spectra have shown the characteristic phonon bands of the different structural phases of manganese suicides formed at different temperatures.

Language: zh

Keywords

In-situ sheet resistance; Infrared spectra; Manganese silicide; Solid phase reaction