Citation

Reiche R, Oswald S, Hofman D, Thomas J, Wetzig K. Fresenius' Journal of Analytical Chemistry 1999; 365(1-3): 76-82.

Copyright

(Copyright © 1999)

DOI

10.1007/s002160051448

PMID

unavailable

Abstract

For further evaluation of photoemission properties of argon ion bombarded rhenium-silicon thin films pure element Re(21 nm) / Si(39 nm) / Re(21 nm) layer sandwiches were investigated on Si(111) substrates. TEM cross sectioning revealed abrupt interfaces between the polycrystalline Re layers and the amorphous Si layer in the as-deposited sample. In XPS sputter depth profiling the interfaces were severely broadened. This is not just a result of the finite electron escape depth together with atomic mixing and preferential sputtering which was demonstrated with the dynamic Monte Carlo simulation program T-DYN, but mainly caused by topographic effects and suicide formation. Factor analysis of XPS spectra results in two Re-Si principal components which can be ascribed to suicide bonding. Accordingly the valence band changes are caused by different bonding configurations. Bombardment-induced suicide formation is proved by TEM investigations of a selected cross-sectioned sandwich. Due to preferential bombardment-induced effects Re2Si is formed at the Re/Si interfaces in contrast to the ReSi2 growth on thermal heating. This is discussed in terms of the interface composition and the effective heat of formation (EHF) model. © Springer-Verlag 1999.

Language: en