Article Title,Year,Volume,Issue,Page Range,Author
Boron-carbide barrier layers in scandium-silicon multilayers,2004,469-470,SPEC. ISS.,372-376,Jankowski
Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization,2004,469-470,SPEC. ISS.,393-397,Chen
Self-forming silicide/SiGe-based tube structure on Si(001) substrates,2004,469-470,SPEC. ISS.,483-486,Chen
STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces,2004,462-463,SPEC. ISS.,114-117,Zhao
X-ray characterization of oriented β-tantalum films,2004,469-470,SPEC. ISS.,404-409,Kohli