Article Title,Year,Volume,Issue,Page Range,Author
Gaseous Impurities in Co Silicidation: Impact and Solutions,2001,148,6,G344-G354,Li
Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization,2004,151,4,C272-C282,Kim
Effects of nickel and palladium activations on the adhesion and I-V characteristics of as-plated electroless nickel deposits on polished crystalline silicon,2004,151,9,C554-C558,Karmalkar
Effects of Ti interlayer on Ni/Si reaction systems,2004,151,7,G452-G455,Chiu
Mechanism of Lithium Insertion into Magnesium Suicide,2004,151,4,A493-A496,Roberts
Characterization of Wsix Films Deposited by Reacting Wf6 with a Mixture of Sih2Cl2 and Si2H6,1992,139,12,3574-3578,Hillman
Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 On Oxide Patterned Wafers II Silicide Properties,1992,139,4,1166-1170,Lee
Compatibility of Refractory Metal Boride/Oxide Composites at Ultrahigh Temperatures,1992,139,11,3183-3196,Bronson
Ultra Shallow Junction Formation Using Diffusion from Silicides: III. Diffusion into Silicon Thermal Stability of Suicides and Junction Integrity,1992,139,1,211-218,Jiang
Ultra Shallow Junction Formation Using Diffusion from Suicides: I. Silicide Formation Dopant Implantation and Depth Profiling,1992,139,1,196-206,Jiang
Analysis of Fluorocarbon Plasma Damage on Si and Its Influence on Ti Silicidation,1995,142,10,3569-3573,Tezuka
Cause of aligned-orientation growth of titanium silicide in plasma enhanced chemical vapor deposition,1996,143,11,3778-3784,Saito
The Influence of Impurities on Cobalt Silicide Formation,1991,138,10,3067-3070,Freitas