TY  - JOUR
PY  - 2010//
TI  - Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
JO  - Journal of the Korean Physical Society
A1  - Jeong, W.
A1  - Ko, Y.
A1  - Bang, S.
A1  - Lee, S.
A1  - Jeon, H.
SP  - 905
EP  - 910
VL  - 56
IS  - 3
N2  - HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD) with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH 3)2]4} as a Hf precursor and a N2 plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250°C The optimized process temperature, plasma power, and pressure were 250°C, 300 W, and 1 Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700°C for 10 min. HfN films deposited on contact holes (0.12-/μm wide and 1.8-μm deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures, and the formation of a copper suicide phase was observed after annealing at 650°C.<p /> <p>Language: en</p>
LA  - en
SN  - 0374-4884
UR  - http://dx.doi.org/10.3938/jkps.56.905
ID  - ref1
ER  -