TY - JOUR PY - 2004// TI - The Role of Surface Chemistry on Spreading Kinetics of Molten Silicides on Silicon Carbide JO - Interface Science A1 - Rado, C. A1 - Eustathopoulos, N. SP - 85 EP - 92 VL - 12 IS - 1 N2 - The spreading time for millimeter-sized droplets of nonreactive molten suicides on silicon carbide in high vacuum is several orders of magnitude higher than typical spreading times observed in nonreactive metal/ceramic systems. To explain this paradox, two types of experiments were performed: (i) wetting experiments for various nonreactive CuSi alloys on α-SiC single crystals using the sessile drop and dispensed drop techniques, with emphasis on determining the initial contact angle; and (ii) characterization of surface chemistry of SiC after different heat treatments in high-vacuum furnaces. It is shown that spreading kinetics in these systems are controlled by the kinetics of removing of wetting barriers present or developed in situ on SiC surface.

Language: en

LA - en SN - 0927-7056 UR - http://dx.doi.org/10.1023/B:INTS.0000012297.30968.02 ID - ref1 ER -