@article{ref1,
title="Auger electron spectroscopy and x-ray diffraction studies of ti-si layers synthesised by ion implantation",
journal="Radiation Effects and Defects in Solids",
year="1990",
author="Vidwans, S.V. and Narsale, A.M. and Salvi, V.P. and Rangwala, A.A. and Guzman, L. and Marchett, F. and Dapor, M. and Calliari, L.",
volume="114",
number="1-2",
pages="93-97",
abstract="Ion implantation of (Ti)) ions into silicon substrates at 30 keV has been done and the resulting layers are investigated by Auger Electron Spectroscopy and Seeman-Bohlin X-ray diffraction. Presence of empty antibonding suicide states above the Fermi level put restrictions on the chemical information from AES in this system. In confirmation, we also do not observe any change in the line shape or shift in the energy position of SifL^VV) transition. XRD results indicate the presence of almost all the titanium silicide phases in the as-implanted layers. Whereas, post implantation anneal at 500°C, for 30 min, transforms the silicide phases to TiSi phase. © 1990, Taylor & Francis Group, LLC. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="1042-0150",
doi="10.1080/10420159008213086",
url="http://dx.doi.org/10.1080/10420159008213086"
}